K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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Faithfully describe 24 hours delivery 7 days Changing or Refunding. Once the data in a page is loaded into the data registers, they may be read out in 50ns 30ns in K9F2G08U0M only cycle time by sequentially pulsing RE.

The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system dataseet for other tasks. The M byte X8 device or M word X16 device physical space requires 29 X8 or 28 X16 addresses, thereby requiring five cycles for addressing: Random data output can be operated multiple times regardless of how many times it is done in a page.

In the case of status read failure after erase or program, block replacement should be done. The words other than those to be programmed do not need to be loaded. Five read cycles sequentially output the manufacturer code EChand the device code and XXh, 4th cycle ID, 50h respectively.

Minimum DC voltage is The Page Program confirm command 10h initiates the programming process. When the next set of data is inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming.


Any undefined command inputs are prohibited except for above command set of Table 1. Yes End Figure 3.

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The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array X8 device: The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. Line Protection, Backups BX An invalid block s does not affect the performance of valid block s because it is isolated from the bit line and the common source line by a select transistor.

The invalid block s status is defined by k9d2g08u0m 1st byte K9f2g008u0m device or 1st word X16 device in the spare area. Total 1, NAND cells reside in a block.

Starting Address of the Register. WP pin provides hardware protection and is recommended to be kept at VIL ,9f2g08u0m power-up and power-down. VIL can undershoot datxsheet This operation is also initiated by writing 00hh to the command register along with five address cycles.

Some commands require one bus cycle. The column address for the next data, which will be entered, may be changed to the address which follows random data input command 85h. Refer to table 3 for device status after reset operation.

The device may output random data in a page instead of the consecutive sequential data by writing random data output command. When the device is in Busy state during random read, program or erase mode, the reset operation will abort these operations. The system design must be able to mask out the invalid block s via address mapping. The internal high voltage generator is reset when the WP pin is active low. The internal write verify detects only errors for “1”s that are not successfully programmed to “0”s.


Its value can be determined by the following guidance. During transitions, this level may undershoot to The programming of the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of data from cache registers. But if the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors.

Do not erase or program factory-marked bad blocks. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption. Refer to Figure 15 below.

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Pb-free Package is added. The device may include invalid blocks when first shipped. The K9F2G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non volatility.

Each of the 32 cells resides in a different page. The device supports kf92g08u0m data input in a page.