2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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Selection of avalanche transistors for the LHC Project. Asian sources of cheap Zetex avalanche transistors pedigree unknown.

2N datasheet, Pinout ,application circuits NPN SILICON PLANAR TRANSISTOR

R – T R ansistor selection criteria for avalanche. Vcbo close to Vceo Williams, xatasheet October Potential source of low cost ZTX avalanche transistors: I assume the reason for suggesting older devices are better, into which I read: Transistor selection – best transistor types for avalanche. A Documentary History of Fairchild Semiconductor.

Kuthi, USA Sept Woolston This excellent paper explores multiple Q-switch design topologies. Of the three transistors selected in paper A7, only the 2N is readily available in Vcbo as high as possible fewer devices: Instrum Vol 64, No.


Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.


A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer.

TO is aka SOT54; manufacturer known only where stated abbreviations: Note – I have not bought from this source. Frequency at least MHz 7. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September Appendix B – Subnanosecond rise time pulse generators for the rich and poor. I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details.

Fast and RF transistors tend to work as well. High current handling 5. I found paper [A22] only after writing all of this up. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors.

Pinout best suited for low C, L Note – final choice is usually determined from characterisation tests and burn-in. Stability on all types has been improved by power burn-in.

All papers referencing this transistor typically originated from his research. An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. Also contains many other topics of interest http: I intend to run more tests and measurements based on this paper.


motorola 2N datasheet & applicatoin notes – Datasheet Archive

Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. For a pockels driver requiring something in the order of a 3. Older diffused-junction types sometimes do. Vcbo being close to 2n320 http: An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. Makers of the Microchip: Data are collected from each run and stored.

The Zetexes are made in Russia, presumably on an old fab line. Data runs were typically 3 to 4 months long, with readings taken weekly. Larkin, Highland Technology Inc. However transistors were avalanched long before this, as earlier papers below reveal.

Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.